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Home Electronics & Robotics ICs & Semiconductors MOSFETs Infineon N-Channel Hexfet Power Mosfet - IRF3710
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Infineon N-Channel Hexfet Power Mosfet - IRF3710

Out of stock
Model No : IRF3710
Type of Product : N-Channel Hexfet Power Mosfet
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100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature

  • Target Applications:

  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull

  • Untitled Document
    Technology: Si
    Mounting Style: Through Hole
    Package/Case: TO-220-3
    Number of Channels: 1 Channel
    Transistor Polarity: N-Channel
    Vds - Drain-Source Breakdown Voltage: 100 V
    Id - Continuous Drain Current: 57 A
    Rds On - Drain-Source Resistance: 23 mOhms
    Vgs - Gate-Source Voltage: 20 V
    Minimum Operating Temperature: - 55 C
    Maximum Operating Temperature: + 175 C
    Configuration: Single
    Channel Mode: Enhancement
    Fall Time: 47 ns
    Height: 15.65 mm
    Length: 10 mm
    Pd - Power Dissipation: 200 W
    Rise Time: 58 ns
    Transistor Type: 1 N-Channel
    Typical Turn-Off Delay Time: 45 ns
    Typical Turn-On Delay Time: 12 ns
    Width: 4.4 mm
    Unit Weight: 6 g

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    1,625 (GST inclusive price)
    1,377 (GST extra)
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