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| Type of Product | MOSFET |
| Model No | FQB55N10TM |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
FQB55N10TM |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
Pack of |
5 Pcs |
Import Country |
Direct Import from Japan |
Monotaro ID |
48010699 |
Packaging Type |
D2PAK(TO263) |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
26 mΩ |
Surface Mount Device |
Surface Mount |
maximum continuous-drain-current (A) |
55 |
Maximum Gate Source Voltage |
-25, 25 V |
Specifications |
QFETRN channel MOSFET,> 31A, FairchildSemiconductor.FairchildSemiconductor's new QFETR planar MOSFET uses advanced proprietary technology, so power supply, PFC (power factor correction), DCDC converter, plasma display panel (PDP), lighting ballast Demonstrates best-in-class performance for a wide range of applications, including motion control. These products reduce the on-state loss by lowering the on-resistance (RDS (on)), and reduce the switching loss by lowering the gate charge (Qg) and output capacitance (Coss). I am. By using advanced QFETR process technology, Fairchild can achieve a better figure of merit (FOM) than competing planar MOSFET devices. |
Minimum Gate Threshold Voltage |
2 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
100 V |
Transistor Configuration |
Single |
Maximum Power Consumption (mW) |
3750 |
Start Delay Time |
110 ns |
Product Type |
Power MOSFET |
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