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| Type of Product | MOSFET |
| Model No | FQN1N60CTA |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
FQN1N60CTA |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
Pack of |
10 Pcs |
Import Country |
Direct Import from Japan |
Monotaro ID |
47913548 |
Packaging Type |
TO-92 |
Maximum Power Consumption (w) |
1 |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
11.5 Ω |
Surface Mount Device |
Through Hole Mount |
maximum continuous-drain-current (A) |
300 mA |
Maximum Gate Source Voltage |
-30/30 V |
Specifications |
[Category] Power MOSFET, QFETRN channel MOSFET, up to 5.9A, FairchildSemiconductor. New QFETR planar MOSFET made by FairchildSemiconductor uses advanced proprietary technology, so power supply, PFC (power factor correction), DC-DC converter, It offers best-in-class performance for a wide range of applications such as plasma display panels (PDPs), lighting ballasts, and motion control. These products reduce the on-state loss by lowering the on-resistance (RDS (on)), and reduce the switching loss by lowering the gate charge (Qg) and output capacitance (Coss). I am. By using advanced QFETR process technology, Fairchild can achieve a better figure of merit (FOM) than competing planar MOSFET devices. |
Minimum Gate Threshold Voltage |
2 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
600 V |
Transistor Configuration |
Single |
Standard output capacity |
130 pF /25 V |
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