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| Type of Product | MOSFET |
| Model No | HUF75339P3 |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
HUF75339P3 |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
Pack of |
5 Pcs |
Import Country |
Direct Import from Japan |
Monotaro ID |
47693565 |
Packaging Type |
TO220AB |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
12 mΩ |
Surface Mount Device |
Through Hole Mount |
maximum continuous-drain-current (A) |
75 |
Maximum Gate Source Voltage |
-20, 20 V |
Specifications |
UltraFETRMOSFET, FairchildSemiconductor.UItraFETRTrenchMOSFET integrates features to achieve benchmark efficiency in power conversion applications. The device can withstand high energies in avalanche mode, the diode has very short reverse recovery time and very low stored charge. Optimized for high frequency, lowest RDS (on), low ESR, low total charge and Miller gate charge. High frequency DCDC converter, switching regulator, motor driver, low voltage bus switch, and power management |
Minimum Gate Threshold Voltage |
2 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
55 V |
Transistor Configuration |
Single |
Maximum Power Consumption (mW) |
200000 |
Product Type |
Power MOSFET |
Width (mm) |
4.83 |
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