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| Type of Product | MOSFET |
| Model No | FQPF6N80C |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
FQPF6N80C |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
Pack of |
5 Pcs |
Import Country |
Direct Import from Japan |
Monotaro ID |
47692165 |
Packaging Type |
TO220F |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
2.5 Ω |
Surface Mount Device |
Through Hole Mount |
maximum continuous-drain-current (A) |
5.5 |
Maximum Gate Source Voltage |
-30, 30 V |
Specifications |
QFETRN channel MOSFET, up to 5.9A, FairchildSemiconductor.FairchildSemiconductor's new QFETR planar MOSFET uses advanced proprietary technology, so power supply, PFC (power factor correction), DCDC converter, plasma display panel (PDP), lighting It offers best-in-class performance for a wide range of applications such as ballast and motion control. These products reduce the on-state loss by lowering the on-resistance (RDS (on)), and reduce the switching loss by lowering the gate charge (Qg) and output capacitance (Coss). I am. By using advanced QFETR process technology, Fairchild can achieve a better figure of merit (FOM) than competing planar MOSFET devices. |
Minimum Gate Threshold Voltage |
3 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
800 V |
Transistor Configuration |
Single |
Maximum Power Consumption (mW) |
51000 |
Start Delay Time |
47 ns |
Product Type |
Power MOSFET |
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