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| Type of Product | MOSFET |
| Model No | RFD14N05LSM |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
RFD14N05LSM |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
Import Country |
Direct Import from Japan |
Monotaro ID |
47997444 |
Packaging Type |
DPAK(TO-252) |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
100 mΩ |
Surface Mount Device |
Surface Mount |
maximum continuous-drain-current (A) |
14 |
Maximum Gate Source Voltage |
-10/10 V |
Specifications |
[Category] Power MOSFET, Enhanced mode N-channel MOSFET, Fairchild Semiconductor. Enhanced mode field effect transistors (FETs) are manufactured using Fairchild's proprietary high cell density, DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. |
Minimum Gate Threshold Voltage |
1 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
50 V |
Transistor Configuration |
Single |
Maximum Power Consumption (mW) |
48000 |
Height (mm) |
2.39 |
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