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| Type of Product | MOSFET |
| Model No | RFD12N06RLESM9A |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
RFD12N06RLESM9A |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
No. Of Pin |
3 |
Pack of |
10 Pcs |
Number of Elements Per Chip |
1 |
Import Country |
Direct Import from Japan |
Monotaro ID |
47999727 |
Packaging Type |
DPAK(TO-252) |
Maximum Power Consumption (w) |
49 |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
75 mΩ |
Surface Mount Device |
Surface Mount |
maximum continuous-drain-current (A) |
18 |
Maximum Gate Source Voltage |
-16/16 V |
Specifications |
[Category] Power MOSFET, UltraFETRMOSFET, FairchildSemiconductor.UItraFETRTrenchMOSFET integrates the characteristics to achieve benchmark efficiency in power conversion applications. The device can withstand high energies in avalanche mode, the diode has very short reverse recovery time and very low stored charge. Optimized for high frequency, lowest RDS (on), low ESR, low total charge and Miller gate charge. High frequency DC-DC converter, switching regulator, motor driver, low voltage bus switch, and power management |
Minimum Gate Threshold Voltage |
1 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
60 V |
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