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| Type of Product | MOSFET |
| Model No | RFD16N06LESM9A |
| Country of Origin | Japan |
| Name of Manufacturer/Packer/Importer | ON SEMICONDUCTOR |
Type of Product |
MOSFET |
Model No |
RFD16N06LESM9A |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N |
No. Of Pin |
3 |
Pack of |
5 Pcs |
Import Country |
Direct Import from Japan |
Monotaro ID |
47998878 |
Packaging Type |
DPAK(TO-252) |
Maximum Power Consumption (w) |
90 |
Channel Mode |
Enhancement type |
Maximum Drain Source Resistance |
47 mΩ |
Surface Mount Device |
Surface Mount |
maximum continuous-drain-current (A) |
16 |
Maximum Gate Source Voltage |
-8, 10 V |
Specifications |
[Category] Power MOSFET, Enhanced mode N-channel MOSFET, Fairchild Semiconductor. Enhanced mode field effect transistors (FETs) are manufactured using Fairchild's proprietary high cell density, DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. |
Minimum Gate Threshold Voltage |
1 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
60 V |
Operating Temperature (c) |
175 ℃ |
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