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Type of Product | Trench N-Channel MOSFET |
Height | 21.46mm |
Width | 5.3mm |
Country of Origin | US |
Type of Product |
Trench N-Channel MOSFET |
Height |
21.46mm |
Width |
5.3mm |
Country of Origin |
US |
Pack of |
Each of 1 Piece |
Mounting Type |
Through Hole |
Maximum Operating Temperature |
+150 °C |
Minimum Operating Temperature |
-55 °C |
Length |
16.26mm |
Name of Manufacturer/Packer/Importer |
IXYS CORPORATION |
Package Type |
TO-247 |
Pin Count |
3 |
Channel Type |
N |
Number of Elements Per Chip |
1 |
Channel Mode |
Enhancement |
Maximum Gate Threshold Voltage |
5V |
Maximum Drain Source Resistance |
24 mΩ |
Maximum Gate Source Voltage |
-20 V, +20 V |
Minimum Gate Threshold Voltage |
3V |
Typical Gate Charge @ Vgs |
157 nC @ 10 V |
Forward Diode Voltage |
1.2V |
Maximum Power Dissipation |
694 W |
Manufacturer Model Number |
IXTH110N25T |
Maximum Continuous Drain Current |
110 A |
Maximum Drain Source Voltage |
250 V |