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| Type of Product | Dual Channel MOSFET |
| Model No | FDME1034CZT |
| Country of Origin | Japan |
| Monotaro ID | 47876843 |
Type of Product |
Dual Channel MOSFET |
Model No |
FDME1034CZT |
Country of Origin |
Japan |
Monotaro ID |
47876843 |
Pack of |
5000 Pcs |
Name of Manufacturer/Packer/Importer |
ON SEMICONDUCTOR |
Channel Type |
N/P |
Channel Mode |
Enhancement type |
Packaging Type |
MicroFET thin |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
1.4 |
Maximum Drain Source Resistance |
160/530 mΩ |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
2.6, 3.8 |
Maximum Gate Source Voltage |
-8/8 V |
Minimum Gate Threshold Voltage |
0.4 V |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
20 V |
Specifications |
[Category] Power MOSFET, PowerTrenchR dual N / P-channel MOSFET, FairchildSemiconductor.PowerTrenchRMOSFET is a power switch optimized to improve system efficiency and power density. These products combine low gate charge (Qg), low reverse recovery charge (Qrr), and soft reverse recovery body diode, contributing to fast switching of synchronous rectification in AC / DC power supplies. The latest PowerTrenchRMOSFETs use a shielded gate structure to achieve charge balance. Due to the use of advanced technology, these devices have a much lower FOM (figure of merit) than previous generation devices. The performance of the soft body diode in PowerTrenchRMOSFETs eliminates the need for a snubber circuit or replaces MOSFETs with higher voltage ratings. |
Transistor Configuration |
Insulation type |
Start Delay Time |
15, 33 ns |
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