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| Type of Product | Power Mosfet |
| Model No | SIR668DP-T1-RE3 |
| Country of Origin | Japan |
| Monotaro ID | 48815279 |
Type of Product |
Power Mosfet |
Model No |
SIR668DP-T1-RE3 |
Country of Origin |
Japan |
Monotaro ID |
48815279 |
Pack of |
2 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
N |
Channel Mode |
Enhancement type |
Packaging Type |
SO |
Dimension (mm) |
6.25x5.26x1.12 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
104 |
Maximum Gate Threshold Voltage |
3.4 |
Maximum Drain Source Resistance |
5.05 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
65 |
Maximum Gate Source Voltage |
-20, +20 |
Minimum Gate Threshold Voltage |
2 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
100 |
Category |
Power MOSFET |
Specifications |
N-channel MOSFET, TrenchFET Gen IV, Vishay Semiconductors |
Transistor Configuration |
Single |
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