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| Type of Product | Power Mosfet |
| Model No | SQ2301ES-T1-GE3 |
| No. Of Pin | 3 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SQ2301ES-T1-GE3 |
No. Of Pin |
3 |
Country of Origin |
Japan |
Monotaro ID |
48815769 |
Pack of |
20 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
SOT-23 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
3 |
Maximum Drain Source Resistance |
180 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
2.2000000000000002 |
Maximum Gate Source Voltage |
-8, +8 |
Minimum Gate Threshold Voltage |
0.45 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
20 |
Specifications |
P-channel MOSFET, SQ rugged series, Vishay Semiconductor |
Operating Temperature (c) |
(Max)+175 |
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