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| Type of Product | Power Mosfet |
| Model No | SI2365EDS-T1-GE3 |
| Country of Origin | Japan |
| Monotaro ID | 48816496 |
Type of Product |
Power Mosfet |
Model No |
SI2365EDS-T1-GE3 |
Country of Origin |
Japan |
Monotaro ID |
48816496 |
Pack of |
3000 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
SOT-23 (TO-236) |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
1.7 |
Maximum Drain Source Resistance |
67.5 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
4.7 |
Maximum Gate Source Voltage |
-8, +8 |
Minimum Gate Threshold Voltage |
0.4 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
20 |
Category |
Power MOSFET |
Specifications |
P-channel MOSFET, 8 to 20 V, Vishay Semiconductor |
Transistor Configuration |
Single |
Operating Temperature (c) |
(Min)-50 |
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