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| Type of Product | Power Mosfet |
| Model No | SI5935CDC-T1-GE3 |
| No. Of Pin | 8 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SI5935CDC-T1-GE3 |
No. Of Pin |
8 |
Country of Origin |
Japan |
Monotaro ID |
48840655 |
Pack of |
20 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
1206 ChipFET |
Dimension (mm) |
3.1x1.7x1.1 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
3.1 |
Maximum Drain Source Resistance |
156 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
3.8 |
Maximum Gate Source Voltage |
-8, +8 |
Minimum Gate Threshold Voltage |
0.4 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
20 |
Category |
Power MOSFET |
Specifications |
Dual P-channel MOSFET, Vishay Semiconductor |
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