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| Type of Product | Power Mosfet |
| Model No | SISS23DN-T1-GE3 |
| Country of Origin | Japan |
| Monotaro ID | 48816259 |
Type of Product |
Power Mosfet |
Model No |
SISS23DN-T1-GE3 |
Country of Origin |
Japan |
Monotaro ID |
48816259 |
Pack of |
20 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Number of Elements Per Chip |
1 |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
PowerPAK 1212 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
57 |
Maximum Drain Source Resistance |
11.5 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
27 |
Maximum Gate Source Voltage |
-8, +8 |
Minimum Gate Threshold Voltage |
0.4 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
20 |
Category |
Power MOSFET |
Specifications |
P-channel MOSFET, TrenchFET Gen III, Vishay Semiconductors |
Transistor Configuration |
Single |
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