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| Type of Product | Power Mosfet |
| Model No | SQD19P06-60L_GE3 |
| Country of Origin | Japan |
| Monotaro ID | 48815683 |
Type of Product |
Power Mosfet |
Model No |
SQD19P06-60L_GE3 |
Country of Origin |
Japan |
Monotaro ID |
48815683 |
Pack of |
10 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
DPAK (TO-252) |
Import Country |
Direct Import from Japan |
Delay Time |
25 |
Maximum Power Consumption (w) |
46 |
Maximum Drain Source Resistance |
125 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
11 |
Maximum Gate Source Voltage |
-20, +20 |
Minimum Gate Threshold Voltage |
1.5 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
60 |
Specifications |
P-channel MOSFET, SQ rugged series, Vishay Semiconductor |
Transistor Configuration |
Single |
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