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| Type of Product | Power Mosfet |
| Model No | SIA449DJ-T1-GE3 |
| Country of Origin | Japan |
| Monotaro ID | 48815963 |
Type of Product |
Power Mosfet |
Model No |
SIA449DJ-T1-GE3 |
Country of Origin |
Japan |
Monotaro ID |
48815963 |
Pack of |
20 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
SOT-363 (SC-70) |
Length (mm) |
2.15 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
19 |
Maximum Drain Source Resistance |
38 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
10.4 |
Maximum Gate Source Voltage |
-12, +12 |
Minimum Gate Threshold Voltage |
0.6 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
30 |
Category |
Power MOSFET |
Specifications |
P-channel MOSFET, TrenchFET Gen III, Vishay Semiconductors |
Transistor Configuration |
Single |
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