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| Type of Product | Power Mosfet |
| Model No | SIHB30N60E-GE3 |
| No. Of Pin | 3 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SIHB30N60E-GE3 |
No. Of Pin |
3 |
Country of Origin |
Japan |
Monotaro ID |
48814387 |
Pack of |
50 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
N |
Channel Mode |
Enhancement type |
Packaging Type |
D2PAK (TO-263) |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
250 |
Maximum Drain Source Resistance |
125 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
29 |
Maximum Gate Source Voltage |
-20, +20 |
Minimum Gate Threshold Voltage |
2 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
600 |
Category |
Power MOSFET |
Specifications |
N-Channel MOSFET, E-Series, Low Performance Index, Vishay Semiconductor. Vishay's E-Series power MOSFETs are high voltage transistors with extremely low maximum on-resistance, low performance index and fast switching. Products with a wide range of rated currents are available. Typical applications include server and communication power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS). Features. Low figure of merit (FOM): RDS (on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS (on)) Ultra low gate charge (Qg) High speed switching Reduced switching loss and conduction loss |
Material (Unit) |
Si |
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