Ships within 19 days
View
View
View
View
| Type of Product | Power Mosfet |
| Model No | SI3493DDV-T1-GE3 |
| No. Of Pin | 6 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SI3493DDV-T1-GE3 |
No. Of Pin |
6 |
Country of Origin |
Japan |
Monotaro ID |
48816724 |
Pack of |
25 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Number of Elements Per Chip |
1 |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
TSOP |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
3.6 |
Maximum Gate Threshold Voltage |
1 |
Maximum Drain Source Resistance |
51 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
8 |
Maximum Gate Source Voltage |
-8, +8 |
Minimum Gate Threshold Voltage |
0.4 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
20 |
Category |
Power MOSFET |
Specifications |
P-channel MOSFET, TrenchFET Gen IV, Vishay Semiconductors |
Looking for bulk pricing or different specifications?
Subscribe to Newsletter
Sign up to get exclusive offers from our favorite brands and to be well up in the news
