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| Type of Product | Power Mosfet |
| Model No | SI4559ADY-T1-GE3 |
| Country of Origin | Japan |
| Monotaro ID | 48812804 |
Type of Product |
Power Mosfet |
Model No |
SI4559ADY-T1-GE3 |
Country of Origin |
Japan |
Monotaro ID |
48812804 |
Pack of |
5 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
N， P |
Channel Mode |
Enhancement type |
Packaging Type |
SOIC |
Dimension (mm) |
5x4x1.5 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
3.1, 3.4 |
Maximum Drain Source Resistance |
72, 150 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
3.9, 5.3 |
Maximum Gate Source Voltage |
-20, +20 |
Minimum Gate Threshold Voltage |
1 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
60 |
Category |
Power MOSFET |
Specifications |
Dual N / P-channel MOSFET, Vishay Semiconductor |
Transistor Configuration |
Insulation type |
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