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| Type of Product | Power Mosfet |
| Model No | SQ3419EV-T1_GE3 |
| No. Of Pin | 6 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SQ3419EV-T1_GE3 |
No. Of Pin |
6 |
Country of Origin |
Japan |
Monotaro ID |
48815866 |
Pack of |
10 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Number of Elements Per Chip |
1 |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
TSOP |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
5 |
Maximum Drain Source Resistance |
78 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
7.4 |
Maximum Gate Source Voltage |
-12, +12 |
Minimum Gate Threshold Voltage |
1.5 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
40 |
Specifications |
P-channel MOSFET, SQ rugged series, Vishay Semiconductor |
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