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| Type of Product | Power Mosfet |
| Model No | SQS462EN-T1_GE3 |
| No. Of Pin | 8 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SQS462EN-T1_GE3 |
No. Of Pin |
8 |
Country of Origin |
Japan |
Monotaro ID |
48813233 |
Pack of |
3000 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
N |
Channel Mode |
Enhancement type |
Packaging Type |
PowerPAK 1212 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
33 |
Maximum Drain Source Resistance |
135 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
8 |
Maximum Gate Source Voltage |
-20, +20 |
Minimum Gate Threshold Voltage |
1.5 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
60 |
Specifications |
AEC-Q101. N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor. Vishay Semiconductor's MOSFET SQ series is designed for all automotive applications that require high durability and reliability. . Benefits of SQ Rugged Series MOSFETs. AEC-Q101 Qualified Junction Temperature: Up to +175 °C Low On Resistance n/p Channel TrenchFETR Technology Breakthrough Space Saving Package Options |
Standard output capacity |
374@25V |
3 options, 3 price levels
Volume discounts
Price locked 30 days
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