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| Type of Product | Power Mosfet |
| Model No | SISS27DN-T1-GE3 |
| No. Of Pin | 8 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
SISS27DN-T1-GE3 |
No. Of Pin |
8 |
Country of Origin |
Japan |
Monotaro ID |
48816225 |
Pack of |
20 Pcs |
Name of Manufacturer/Packer/Importer |
Vishay |
Channel Type |
P |
Channel Mode |
Enhancement type |
Packaging Type |
PowerPAK 1212 |
Import Country |
Direct Import from Japan |
Delay Time |
65 |
Maximum Power Consumption (w) |
57 |
Maximum Drain Source Resistance |
9 |
Surface Mount Device |
Surface mount |
maximum continuous-drain-current (A) |
23 |
Maximum Gate Source Voltage |
-20, +20 |
Minimum Gate Threshold Voltage |
1 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
30 |
Category |
Power MOSFET |
Specifications |
P-channel MOSFET, TrenchFET Gen III, Vishay Semiconductors |
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