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| Type of Product | Power Mosfet |
| Model No | CAS300M12BM2 |
| No. Of Pin | 7 |
| Country of Origin | Japan |
Type of Product |
Power Mosfet |
Model No |
CAS300M12BM2 |
No. Of Pin |
7 |
Country of Origin |
Japan |
Monotaro ID |
48938655 |
Name of Manufacturer/Packer/Importer |
WOLFSPEED |
Channel Type |
N |
Channel Mode |
Enhancement type |
Height (mm) |
30 |
Import Country |
Direct Import from Japan |
Maximum Power Consumption (w) |
1.66k |
Maximum Gate Threshold Voltage |
2.2999999999999998 |
Maximum Drain Source Resistance |
9.7999999999999997E-3 |
Surface Mount Device |
Panel mount |
maximum continuous-drain-current (A) |
404 |
Maximum Gate Source Voltage |
-10, +25 |
Minimum Gate Threshold Voltage |
1.8 |
RoHS Directive |
Correspondence |
Maximum Drain Source Voltage |
1200 |
Category |
Power MOSFET |
Specifications |
Wolfspeed silicon carbide power MOSFET module. This is a silicon carbide power MOSFET module from Wolfspeed, a power division of Cree Inc. This SiC MOSFET module comes in an industry standard package and is available in half-bridge (2 MOSFET) and 3-phase (6 MOSFET) formats and comes with a SiC reverse recovery diode. Main applications include induction heating, solar and wind inverters, DC-DC converters, three-phase PFC, line regenerative drives, UPS and SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra-low-loss high-frequency operation; Easy paralleling due to SiC characteristics; Normal off, fail-safe operation; Thermal requirements reduced by copper base plate and aluminum nitride insulator |
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