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| Output | NPN |
| Type of Product | Photo Microsensor |
| Standard sensing Object | Opaque body Φ5 mm or more |
| Power Supply Voltage | DC5V5% to 24±10% Ripple (pp) 5% or less |
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Output |
NPN |
Type of Product |
Photo Microsensor |
Standard sensing Object |
Opaque body Φ5 mm or more |
Power Supply Voltage |
DC5V5% to 24±10% Ripple (pp) 5% or less |
Ambient Humidity |
Operating: 5 to 85% RH, Storage: 5 to 95% RH |
Protection Class |
IEC standard IP60 |
Operation Mode |
ON when light is blocked |
Current Consumption |
Emitter / receiver: 20 mA or less each |
Control Output |
NPN open collector output Load current 100 mA or less Residual voltage 0.8 V or less (at 100 mA load current), Residual voltage 0.4 V or less (at 10 mA load current) |
Connection Type |
Connector type (not solderable) |
Lens Material |
Polycarbonate |
Model No |
EE-SPW311 |
Case Material |
Polybutylene terephthalate (PBT) |
Emitting Element |
GaAs infrared light emitting diode |
Ambient Illumination to Use (Lx) |
Light receiving surface illuminance 3000 or less |
Detection Method |
Transmission type |
Monotaro ID |
8586112 |
Indicator Lamp |
Lights up when receiving light (red) <br> GaP red LED (peak emission wavelength 700nm) |
Positioning Angle |
5～20° |
Country of Origin |
Japan |
Response Frequency |
over 100 Hz |
Included Components |
EE1006L / D cord connector |
Vibration Resistance (Destruction) |
200 to 2000Hz (peak acceleration 100 m/s² ) Double amplitude 1.5 mm X, Y and Z directions 2h (4min cycle) |
Detection Distance |
1000 mm |
Name of Manufacturer/Packer/Importer |
Omron Corporation |
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