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Omron Diffuse Reflection Type Photoelectric Sensor with Built-in Compact Amplifier, E3Z-L66
Direct Import From Japan

Omron Diffuse Reflection Type Photoelectric Sensor with Built-in Compact Amplifier, E3Z-L66

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Features
Type Built-In Amplifier
Response Time 1 ms or less
Output NPN
Protection Circuit Surge Absorption Load Short Circuit Protection Output Reverse Connection Protection Power Supply Reverse Connection Protection Mutual Interference Prevention Function
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Type

Built-In Amplifier

Response Time

1 ms or less

Output

NPN

Protection Circuit

Surge Absorption Load Short Circuit Protection Output Reverse Connection Protection Power Supply Reverse Connection Protection Mutual Interference Prevention Function

Type of Product

Photoelectric Sensor with Built-in Compact Amplifier

Weight

Approx. 20 g (Packed)

Insulation Resistance

20 MΩ or more (at 500 VDC)

Power Supply Voltage

DC12-24V ± 10%, Ripple (PP) 10% or less

Ambient Humidity

Operating: 35 to 85% RH, Storage: 35 to 95 % RH (with no icing or condensation)

Protection Class

IEC standard IP67

Current Consumption

30 mA or less

Control Output

Load Power Supply Voltage: DC26.4V or less, (Light-on/Light-off Switching Type)

Connection Type

Connector Type (M8)

Load Current

100mA or less (residual voltage load current less than 10mA: 1V or less, load current 10 to 100mA: 2V or less)

Lens Material

Modified Polyarylate

Model No

E3Z-L66

Case Material

Polybutylene Terephthalate

Detection Method

Diffuse Reflection Type

Monotaro ID

39053095

Laser Spot Diameter

Emission: Φ2.5 mm or less (at a detection distance of 90 mm)

Minimum Detectable Object

Φ0.1 mm

Country of Origin

Japan

Vibration Resistance (Destruction)

10~55 Hz, 1.5 mm Double Amplitude, 2 Hours Each in X, Y, and Z Directions

Name of Manufacturer/Packer/Importer

Omron Corporation

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