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| No. Of Pin | 3 |
| Packaging Type | TO-220AB |
| Model No | V20120S-E3/4W |
| Width (mm) | 4.7 |
No. Of Pin |
3 |
Packaging Type |
TO-220AB |
Model No |
V20120S-E3/4W |
Width (mm) |
4.7 |
Height (mm) |
15.32 |
Length (mm) |
10.54 |
Type of Product |
Schottky Barrier Diode |
Country of Origin |
Japan |
Name of Manufacturer/Packer/Importer |
Vishay |
Number of Elements Per Chip |
1 |
Maximum Forward Voltage Drop |
1.1200000000000001 |
Peak Non-Repetitive Forward Surge Current |
200 |
Pack of |
5 Pcs |
Technology |
Schottky |
Repetitive Reverse Voltage |
120 |
Monotaro ID |
48824187 |
Import Country |
Direct Import from Japan |
Specifications |
TMBS-Trench MOS Barrier Schottky Rectifier, up to 20 A, Vishay Semiconductor. Vishay's Trench MOS Barrier Schottky (TMBS) rectifier series includes a patented trench structure. TMBS rectifiers have several advantages over planar Schottky rectifiers. At operating voltages above 45 V, planar Schottky rectifiers lose the advantage of their fast switching speed and can significantly reduce low forward voltages. The patented TMBS structure solves this problem by reducing minority carrier injection into the drift region. As a result, the stored charge is minimized and switching speed is increased. Features. Patented trench structure Improves the efficiency of AC / DC switch mode power supplies and DC / DC converters. Achieves high power density and low forward voltage. |
RoHS Directive |
Correspondence |
Diode |
Single |
Surface Mount Device |
Through hole |
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